Methods of forming titanium-aluminum layers for gate electrodes and related semiconductor devices

Methods of forming a semiconductor device are provided in which a first titanium-aluminum layer is formed in a recess. A first titanium layer is formed in the recess on top of the first titanium-aluminum layer. A first aluminum layer is formed in the recess on top of the first titanium layer to form...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Williams David J, Bordelon Clint E, Drizlikh Sergei, Kim Jun-Han
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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