Nanoscale variable resistor/electromechanical transistor
A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picose...
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| creator | Bürki Jerome Alexandre Stafford Charles Allen Stein Daniel L |
| description | A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an "electromechanical transistor," is shown to significantly exceed the conductance quantum G0=2e2/h. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9406789B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9406789B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9406789B23</originalsourceid><addsrcrecordid>eNrjZLDwS8zLL05OzElVKEssykxMAjKKUoszi0vyi_RTc1KTS4ryc1OTMxLzMoGKFEqKEvMgkjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JD402NLEwMzcwtLJyJgIJQAkyy83</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Nanoscale variable resistor/electromechanical transistor</title><source>esp@cenet</source><creator>Bürki Jerome Alexandre ; Stafford Charles Allen ; Stein Daniel L</creator><creatorcontrib>Bürki Jerome Alexandre ; Stafford Charles Allen ; Stein Daniel L</creatorcontrib><description>A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an "electromechanical transistor," is shown to significantly exceed the conductance quantum G0=2e2/h.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; PULSE TECHNIQUE ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160802&DB=EPODOC&CC=US&NR=9406789B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160802&DB=EPODOC&CC=US&NR=9406789B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bürki Jerome Alexandre</creatorcontrib><creatorcontrib>Stafford Charles Allen</creatorcontrib><creatorcontrib>Stein Daniel L</creatorcontrib><title>Nanoscale variable resistor/electromechanical transistor</title><description>A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an "electromechanical transistor," is shown to significantly exceed the conductance quantum G0=2e2/h.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PULSE TECHNIQUE</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwS8zLL05OzElVKEssykxMAjKKUoszi0vyi_RTc1KTS4ryc1OTMxLzMoGKFEqKEvMgkjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JD402NLEwMzcwtLJyJgIJQAkyy83</recordid><startdate>20160802</startdate><enddate>20160802</enddate><creator>Bürki Jerome Alexandre</creator><creator>Stafford Charles Allen</creator><creator>Stein Daniel L</creator><scope>EVB</scope></search><sort><creationdate>20160802</creationdate><title>Nanoscale variable resistor/electromechanical transistor</title><author>Bürki Jerome Alexandre ; Stafford Charles Allen ; Stein Daniel L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9406789B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PULSE TECHNIQUE</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Bürki Jerome Alexandre</creatorcontrib><creatorcontrib>Stafford Charles Allen</creatorcontrib><creatorcontrib>Stein Daniel L</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bürki Jerome Alexandre</au><au>Stafford Charles Allen</au><au>Stein Daniel L</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Nanoscale variable resistor/electromechanical transistor</title><date>2016-08-02</date><risdate>2016</risdate><abstract>A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an "electromechanical transistor," is shown to significantly exceed the conductance quantum G0=2e2/h.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PULSE TECHNIQUE SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Nanoscale variable resistor/electromechanical transistor |
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