P-type metal oxide semiconductor material and transistor

A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0

Bibliographische Detailangaben

Hauptverfasser:	Chao Wen-Hsuan, Chang Mu-Tung, Cheng Hsin-Ming, Chiou Shan-Haw, Chou Tzu-Chi, Huang Tien-Heng, Cai Ren-Fong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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