P-type metal oxide semiconductor material and transistor
A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0
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| creator | Chao Wen-Hsuan Chang Mu-Tung Cheng Hsin-Ming Chiou Shan-Haw Chou Tzu-Chi Huang Tien-Heng Cai Ren-Fong |
| description | A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0 |
| format | Patent |
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| title | P-type metal oxide semiconductor material and transistor |
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