Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

A semiconductor device includes: a plurality of stacked semiconductor layers; a plurality of composite doped regions separately and parallelly disposed in a portion of the semiconductor layers along a first direction; a gate structure disposed over a portion of the semiconductor layers along a secon...

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Hauptverfasser: CHANG HSIUNG-SHIH, CHANG JUIUN, HUANG CHIH-JEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHANG HSIUNG-SHIH
CHANG JUIUN
HUANG CHIH-JEN
description A semiconductor device includes: a plurality of stacked semiconductor layers; a plurality of composite doped regions separately and parallelly disposed in a portion of the semiconductor layers along a first direction; a gate structure disposed over a portion of the semiconductor layers along a second direction, wherein the gate structure covers a portion of the composite doped regions; a first doped region formed in the most top semiconductor layer along the second direction and being adjacent to a first side of the gate structure; and a second doped region formed in the most top semiconductor layer along the second direction and being adjacent to a second side of the gate structure opposite to the first side thereof.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and method for fabricating the same
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