RRAM retention by depositing Ti capping layer before HK HfO

The present disclosure relates to a resistance random access memory (RRAM) device architecture where a Ti metal capping layer is deposited before the deposition of the HK HfO resistance switching layer. Here, the capping layer is below the HK HfO layer, and hence no damage will occur during the top...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ONG TONGRN, LIAO YU-WEN, CHU WEN-TING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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