Method for providing charge protection to one or more dies during formation of a stacked silicon device

Method for providing charge protection to one or more dies during formation of a stacked silicon device

A method for providing charge protection to a die during formation of an integrated circuit, includes bonding the die to an interposer to form an unprotected stacked silicon component; encapsulating the unprotected stacked silicon component with a mold compound to cover at least a top surface of the...

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Hauptverfasser: O'ROURKE GLENN, CHAWARE RAGHUNANDAN, HARIHARAN GANESH, SINGH INDERJIT
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator O'ROURKE GLENN
CHAWARE RAGHUNANDAN
HARIHARAN GANESH
SINGH INDERJIT
description A method for providing charge protection to a die during formation of an integrated circuit, includes bonding the die to an interposer to form an unprotected stacked silicon component; encapsulating the unprotected stacked silicon component with a mold compound to cover at least a top surface of the die; grinding the mold compound to reduce a thickness of the mold compound; bonding a carrier wafer to the mold compound; removing the carrier wafer from the mold compound; and removing the mold compound from the top surface of the die after the carrier wafer is removed from the mold compound, to expose the top surface of the die.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for providing charge protection to one or more dies during formation of a stacked silicon device
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