Integrated circuits with capacitors and methods of producing the same

Integrated circuits with MIM capacitors and methods for producing them with metal and oxide hard masks are provided. Embodiments include disposing a dielectric layer over an ILD, the ILD including a contact therethrough in a first region; forming a capacitor trench in the dielectric layer in a secon...

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Bibliographische Detailangaben
Hauptverfasser: BAE SANGGIL, JOUNG TONY, LEE KI YOUNG
Format: Patent
Sprache:eng
Schlagworte:
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