Three-dimensional (3D) semiconductor device

A semiconductor device includes interlayer dielectrics stacked and spaced apart from each other, a channel layer passing through the interlayer dielectrics, line pattern regions each surrounding a sidewall of the channel layer to be disposed between the interlayer dielectrics, a barrier pattern form...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KWON WOO JUNE, AHN MYUNG KYU, HYUN CHAN SUN
Format: Patent
Sprache:eng
Schlagworte:
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