Vertical semiconductor device including element active portion and voltage withstanding structure portion, and method of manufacturing the vertical semiconductor device

Aspects of the invention are directed to a vertical semiconductor device including an element active portion and a voltage withstanding structure portion that has a first main electrode and a gate pad electrode on a first main surface of the element active portion, includes first parallel pn layers...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NIIMURA YASUSHI, SAKATA TOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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