Tensile separation of a semiconducting stack

Tensile separation of a semiconducting stack

A stressor layer is applied to a semiconducting stack in order to separate the semiconducting stack at a predetermined depth. Tensile force is applied to the stressor layer, fracturing the semiconducting stack at the predetermined depth and allowing the resulting upper portion of the semiconducting...

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Hauptverfasser: PARANJPE AJIT, METZNER CRAIG, LEE JIA
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator PARANJPE AJIT
METZNER CRAIG
LEE JIA
description A stressor layer is applied to a semiconducting stack in order to separate the semiconducting stack at a predetermined depth. Tensile force is applied to the stressor layer, fracturing the semiconducting stack at the predetermined depth and allowing the resulting upper portion of the semiconducting stack to be used in manufacturing a semiconducting end-product (e.g., a light-emitting diode). The resulting lower portion of the semiconducting stack may be reused to grow a new semiconducting stack thereon.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Tensile separation of a semiconducting stack
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