Remote gate protection diode for field effect transistors

The present disclosure relates to gate oxide protection circuits, which are used to protect the gate oxides of field effect transistor (FET) elements from over voltage conditions, particularly during situations in which the gate oxides are particularly vulnerable, such as during certain manufacturin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MASON PHILIP, KERR DANIEL CHARLES, CARROLL MICHAEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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