Method for exposing a layer

Method for exposing a layer

A method for exposing a layer buried in a substrate via a trench having an insulated lateral wall and an insulated floor includes the steps of applying an oxide onto the substrate and anisotropic etching. Applying the oxide onto the substrate takes place at least in a region of the trench such that...

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1. Verfasser: HACKER ERWIN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A method for exposing a layer buried in a substrate via a trench having an insulated lateral wall and an insulated floor includes the steps of applying an oxide onto the substrate and anisotropic etching. Applying the oxide onto the substrate takes place at least in a region of the trench such that the oxide protrudes from an edge of the trench into the trench. The protruding oxide shields the insulated lateral wall of the trench when anisotropically etching at least the insulated floor of the trench.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for exposing a layer
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