Systems and methods to update reference voltages in response to data retention in non-volatile memory

A data storage device includes non-volatile memory and a controller. The controller is configured to, at a first time, determine a first count of storage elements having threshold voltages within a voltage range that corresponds to a first reference voltage. The controller is further configured to,...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	D'ABREU MANUEL ANTONIO, DESIREDDI SATEESH, VENKITACHALAM ANAND, NARADASI JAYAPRAKASH, SKALA STEPHEN
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	D'ABREU MANUEL ANTONIO DESIREDDI SATEESH VENKITACHALAM ANAND NARADASI JAYAPRAKASH SKALA STEPHEN
description	A data storage device includes non-volatile memory and a controller. The controller is configured to, at a first time, determine a first count of storage elements having threshold voltages within a voltage range that corresponds to a first reference voltage. The controller is further configured to, at a second time, determine a second count of storage elements having threshold voltages within the voltage range. The controller is further configured to calculate an updated first reference voltage at least partially based on the first reference voltage, the first count, and the second count.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9349489B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9349489B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9349489B23</originalsourceid><addsrcrecordid>eNqNjDEOgkAQRbexMOod5gI0QiGtBmOP1mTCfpQEZggzmnB7l8QDWP3k_Ze3DagXc4xGLJFG-EujkSu9p8gOmtFhhrSgjw7OTxj1kqhNKoZVTBon4BDvVdZXVLJks_cDUnLUedmHTceD4fDbXaBrdb_cMkzapBi3EHjzqMu8KItTeT7mfyhf3zA_dg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Systems and methods to update reference voltages in response to data retention in non-volatile memory</title><source>esp@cenet</source><creator>D'ABREU MANUEL ANTONIO ; DESIREDDI SATEESH ; VENKITACHALAM ANAND ; NARADASI JAYAPRAKASH ; SKALA STEPHEN</creator><creatorcontrib>D'ABREU MANUEL ANTONIO ; DESIREDDI SATEESH ; VENKITACHALAM ANAND ; NARADASI JAYAPRAKASH ; SKALA STEPHEN</creatorcontrib><description>A data storage device includes non-volatile memory and a controller. The controller is configured to, at a first time, determine a first count of storage elements having threshold voltages within a voltage range that corresponds to a first reference voltage. The controller is further configured to, at a second time, determine a second count of storage elements having threshold voltages within the voltage range. The controller is further configured to calculate an updated first reference voltage at least partially based on the first reference voltage, the first count, and the second count.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160524&DB=EPODOC&CC=US&NR=9349489B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160524&DB=EPODOC&CC=US&NR=9349489B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>D'ABREU MANUEL ANTONIO</creatorcontrib><creatorcontrib>DESIREDDI SATEESH</creatorcontrib><creatorcontrib>VENKITACHALAM ANAND</creatorcontrib><creatorcontrib>NARADASI JAYAPRAKASH</creatorcontrib><creatorcontrib>SKALA STEPHEN</creatorcontrib><title>Systems and methods to update reference voltages in response to data retention in non-volatile memory</title><description>A data storage device includes non-volatile memory and a controller. The controller is configured to, at a first time, determine a first count of storage elements having threshold voltages within a voltage range that corresponds to a first reference voltage. The controller is further configured to, at a second time, determine a second count of storage elements having threshold voltages within the voltage range. The controller is further configured to calculate an updated first reference voltage at least partially based on the first reference voltage, the first count, and the second count.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDEOgkAQRbexMOod5gI0QiGtBmOP1mTCfpQEZggzmnB7l8QDWP3k_Ze3DagXc4xGLJFG-EujkSu9p8gOmtFhhrSgjw7OTxj1kqhNKoZVTBon4BDvVdZXVLJks_cDUnLUedmHTceD4fDbXaBrdb_cMkzapBi3EHjzqMu8KItTeT7mfyhf3zA_dg</recordid><startdate>20160524</startdate><enddate>20160524</enddate><creator>D'ABREU MANUEL ANTONIO</creator><creator>DESIREDDI SATEESH</creator><creator>VENKITACHALAM ANAND</creator><creator>NARADASI JAYAPRAKASH</creator><creator>SKALA STEPHEN</creator><scope>EVB</scope></search><sort><creationdate>20160524</creationdate><title>Systems and methods to update reference voltages in response to data retention in non-volatile memory</title><author>D'ABREU MANUEL ANTONIO ; DESIREDDI SATEESH ; VENKITACHALAM ANAND ; NARADASI JAYAPRAKASH ; SKALA STEPHEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9349489B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>D'ABREU MANUEL ANTONIO</creatorcontrib><creatorcontrib>DESIREDDI SATEESH</creatorcontrib><creatorcontrib>VENKITACHALAM ANAND</creatorcontrib><creatorcontrib>NARADASI JAYAPRAKASH</creatorcontrib><creatorcontrib>SKALA STEPHEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>D'ABREU MANUEL ANTONIO</au><au>DESIREDDI SATEESH</au><au>VENKITACHALAM ANAND</au><au>NARADASI JAYAPRAKASH</au><au>SKALA STEPHEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Systems and methods to update reference voltages in response to data retention in non-volatile memory</title><date>2016-05-24</date><risdate>2016</risdate><abstract>A data storage device includes non-volatile memory and a controller. The controller is configured to, at a first time, determine a first count of storage elements having threshold voltages within a voltage range that corresponds to a first reference voltage. The controller is further configured to, at a second time, determine a second count of storage elements having threshold voltages within the voltage range. The controller is further configured to calculate an updated first reference voltage at least partially based on the first reference voltage, the first count, and the second count.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US9349489B2
source	esp@cenet
subjects	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES
title	Systems and methods to update reference voltages in response to data retention in non-volatile memory
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T15%3A12%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=D'ABREU%20MANUEL%20ANTONIO&rft.date=2016-05-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9349489B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true