Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method

Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30) 350 (%/nm), and has a maximum height (Rmax) 1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, w...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOZAKAI HIROFUMI, SHOKI TSUTOMU, HORIKAWA JUNICHI, ORIHARA TOSHIHIKO, USUI YOUICHI, HAMAMOTO KAZUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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