Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials

A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furtherm...

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Hauptverfasser: TABAT MARTIN D, OLSEN CHRISTOPHER K, SHAO YAN, MACCRIMMON RUAIRIDH, FERNANDEZ LUIS
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creator TABAT MARTIN D
OLSEN CHRISTOPHER K
SHAO YAN
MACCRIMMON RUAIRIDH
FERNANDEZ LUIS
description A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
title Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials
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