Semiconductor device and method for fabricating semiconductor device

A semiconductor device according to an embodiment includes a gate electrode, a first dielectric film, an oxide semiconductor film, a second dielectric film, a source electrode and a drain electrode. The first dielectric film is placed above the gate electrode. The oxide semiconductor film is placed...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OHGURO TATSUYA, FUKASE KAZUYA, MOMOSE HISAYO, MOROOKA TETSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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