Semiconductor devices having through-electrodes and methods for fabricating the same

The present inventive concepts provide semiconductor devices and methods for fabricating the same. The method includes forming an inter-metal dielectric layer including a plurality of dielectric layers on a substrate, forming a via-hole vertically penetrating the inter-metal dielectric layer and the...

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Hauptverfasser:	HAN KYU-HEE, YIM TAEJIN, KANG PIL-KYU, LEE NAEIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	HAN KYU-HEE YIM TAEJIN KANG PIL-KYU LEE NAEIN
description	The present inventive concepts provide semiconductor devices and methods for fabricating the same. The method includes forming an inter-metal dielectric layer including a plurality of dielectric layers on a substrate, forming a via-hole vertically penetrating the inter-metal dielectric layer and the substrate, providing carbon to at least one surface, such as a surface including carbon in the plurality of dielectric layers exposed by the via-hole, forming a via-dielectric layer covering an inner surface of the via-hole, and forming a through-electrode surrounded by the via-dielectric layer in the via-hole.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semiconductor devices having through-electrodes and methods for fabricating the same
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