Integrated circuits with separate workfunction material layers and methods for fabricating the same

Integrated circuits employing replacement metal gate technologies with separate workfunction material layers and raised source/drain structures and methods for fabricating the same are disclosed herein. In one exemplary embodiment, a method of fabricating an integrated circuit includes forming a fir...

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Hauptverfasser:	JAKUBOWSKI FRANK, FAUL JUERGEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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