EUV lithography apparatus and method for detecting particles in an EUV lithography apparatus
An EUV lithography apparatus (1) includes: a light source (15) for generating radiation (17) for the illumination of particles (P) present in the gas phase and present in the EUV lithography apparatus (1) along a light area (18), and a detector, for detecting radiation (17a) from the light source (1...
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| creator | EHM DIRK HEINRICH BUTSCHER VERA |
| description | An EUV lithography apparatus (1) includes: a light source (15) for generating radiation (17) for the illumination of particles (P) present in the gas phase and present in the EUV lithography apparatus (1) along a light area (18), and a detector, for detecting radiation (17a) from the light source (15) that is scattered at the illuminated particles (P) in a test region (19) captured by the detector. Also, a method for detecting particles (P) in an EUV lithography apparatus (1) includes: producing a light area (18) for illuminating the particles (P) present in the gas phase, detecting radiation (17a) scattered at the illuminated particles (P) in a test region (19), and determining a number (N) of particles in the test region (19) on the basis of the detected radiation (17a). |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9298109B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9298109B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9298109B23</originalsourceid><addsrcrecordid>eNrjZIhxDQ1TyMksychPL0osyKhUSCwoSCxKLCktVkjMS1HITQXKpCik5RcppKSWpCaXZOalKwAVlGQm56QWK2TmAVUp4DSCh4E1LTGnOJUXSnMzKLi5hjh76KYW5MenFhckJqfmpZbEhwZbGllaGBpYOhkZE6EEADAAO5g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>EUV lithography apparatus and method for detecting particles in an EUV lithography apparatus</title><source>esp@cenet</source><creator>EHM DIRK HEINRICH ; BUTSCHER VERA</creator><creatorcontrib>EHM DIRK HEINRICH ; BUTSCHER VERA</creatorcontrib><description>An EUV lithography apparatus (1) includes: a light source (15) for generating radiation (17) for the illumination of particles (P) present in the gas phase and present in the EUV lithography apparatus (1) along a light area (18), and a detector, for detecting radiation (17a) from the light source (15) that is scattered at the illuminated particles (P) in a test region (19) captured by the detector. Also, a method for detecting particles (P) in an EUV lithography apparatus (1) includes: producing a light area (18) for illuminating the particles (P) present in the gas phase, detecting radiation (17a) scattered at the illuminated particles (P) in a test region (19), and determining a number (N) of particles in the test region (19) on the basis of the detected radiation (17a).</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; ELECTROPHOTOGRAPHY ; HOLOGRAPHY ; MAGNETOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160329&DB=EPODOC&CC=US&NR=9298109B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160329&DB=EPODOC&CC=US&NR=9298109B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EHM DIRK HEINRICH</creatorcontrib><creatorcontrib>BUTSCHER VERA</creatorcontrib><title>EUV lithography apparatus and method for detecting particles in an EUV lithography apparatus</title><description>An EUV lithography apparatus (1) includes: a light source (15) for generating radiation (17) for the illumination of particles (P) present in the gas phase and present in the EUV lithography apparatus (1) along a light area (18), and a detector, for detecting radiation (17a) from the light source (15) that is scattered at the illuminated particles (P) in a test region (19) captured by the detector. Also, a method for detecting particles (P) in an EUV lithography apparatus (1) includes: producing a light area (18) for illuminating the particles (P) present in the gas phase, detecting radiation (17a) scattered at the illuminated particles (P) in a test region (19), and determining a number (N) of particles in the test region (19) on the basis of the detected radiation (17a).</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>ELECTROPHOTOGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MAGNETOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIhxDQ1TyMksychPL0osyKhUSCwoSCxKLCktVkjMS1HITQXKpCik5RcppKSWpCaXZOalKwAVlGQm56QWK2TmAVUp4DSCh4E1LTGnOJUXSnMzKLi5hjh76KYW5MenFhckJqfmpZbEhwZbGllaGBpYOhkZE6EEADAAO5g</recordid><startdate>20160329</startdate><enddate>20160329</enddate><creator>EHM DIRK HEINRICH</creator><creator>BUTSCHER VERA</creator><scope>EVB</scope></search><sort><creationdate>20160329</creationdate><title>EUV lithography apparatus and method for detecting particles in an EUV lithography apparatus</title><author>EHM DIRK HEINRICH ; BUTSCHER VERA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9298109B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>ELECTROPHOTOGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MAGNETOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>EHM DIRK HEINRICH</creatorcontrib><creatorcontrib>BUTSCHER VERA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EHM DIRK HEINRICH</au><au>BUTSCHER VERA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EUV lithography apparatus and method for detecting particles in an EUV lithography apparatus</title><date>2016-03-29</date><risdate>2016</risdate><abstract>An EUV lithography apparatus (1) includes: a light source (15) for generating radiation (17) for the illumination of particles (P) present in the gas phase and present in the EUV lithography apparatus (1) along a light area (18), and a detector, for detecting radiation (17a) from the light source (15) that is scattered at the illuminated particles (P) in a test region (19) captured by the detector. Also, a method for detecting particles (P) in an EUV lithography apparatus (1) includes: producing a light area (18) for illuminating the particles (P) present in the gas phase, detecting radiation (17a) scattered at the illuminated particles (P) in a test region (19), and determining a number (N) of particles in the test region (19) on the basis of the detected radiation (17a).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY ELECTROPHOTOGRAPHY HOLOGRAPHY MAGNETOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | EUV lithography apparatus and method for detecting particles in an EUV lithography apparatus |
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