Memory cell array
A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate st...
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creator | TIEN LIUN LIAW JHON-JHY PAN KUO-HUA TIEN CHIENI CHENG HONGN CHANG SHI-WEI |
description | A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is formed on the active region and between the first transistor and the second transistor. The interconnect connects the gate structure and at least one of sources of the first transistor and the second transistor to a power line. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9287276B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9287276B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9287276B23</originalsourceid><addsrcrecordid>eNrjZBD0Tc3NL6pUSE7NyVFILCpKrORhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZZGFuZG5mZORsZEKAEAjcsfVA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Memory cell array</title><source>esp@cenet</source><creator>TIEN LIUN ; LIAW JHON-JHY ; PAN KUO-HUA ; TIEN CHIENI ; CHENG HONGN ; CHANG SHI-WEI</creator><creatorcontrib>TIEN LIUN ; LIAW JHON-JHY ; PAN KUO-HUA ; TIEN CHIENI ; CHENG HONGN ; CHANG SHI-WEI</creatorcontrib><description>A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is formed on the active region and between the first transistor and the second transistor. The interconnect connects the gate structure and at least one of sources of the first transistor and the second transistor to a power line.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160315&DB=EPODOC&CC=US&NR=9287276B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160315&DB=EPODOC&CC=US&NR=9287276B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TIEN LIUN</creatorcontrib><creatorcontrib>LIAW JHON-JHY</creatorcontrib><creatorcontrib>PAN KUO-HUA</creatorcontrib><creatorcontrib>TIEN CHIENI</creatorcontrib><creatorcontrib>CHENG HONGN</creatorcontrib><creatorcontrib>CHANG SHI-WEI</creatorcontrib><title>Memory cell array</title><description>A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is formed on the active region and between the first transistor and the second transistor. The interconnect connects the gate structure and at least one of sources of the first transistor and the second transistor to a power line.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD0Tc3NL6pUSE7NyVFILCpKrORhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZZGFuZG5mZORsZEKAEAjcsfVA</recordid><startdate>20160315</startdate><enddate>20160315</enddate><creator>TIEN LIUN</creator><creator>LIAW JHON-JHY</creator><creator>PAN KUO-HUA</creator><creator>TIEN CHIENI</creator><creator>CHENG HONGN</creator><creator>CHANG SHI-WEI</creator><scope>EVB</scope></search><sort><creationdate>20160315</creationdate><title>Memory cell array</title><author>TIEN LIUN ; LIAW JHON-JHY ; PAN KUO-HUA ; TIEN CHIENI ; CHENG HONGN ; CHANG SHI-WEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9287276B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>TIEN LIUN</creatorcontrib><creatorcontrib>LIAW JHON-JHY</creatorcontrib><creatorcontrib>PAN KUO-HUA</creatorcontrib><creatorcontrib>TIEN CHIENI</creatorcontrib><creatorcontrib>CHENG HONGN</creatorcontrib><creatorcontrib>CHANG SHI-WEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TIEN LIUN</au><au>LIAW JHON-JHY</au><au>PAN KUO-HUA</au><au>TIEN CHIENI</au><au>CHENG HONGN</au><au>CHANG SHI-WEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory cell array</title><date>2016-03-15</date><risdate>2016</risdate><abstract>A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is formed on the active region and between the first transistor and the second transistor. The interconnect connects the gate structure and at least one of sources of the first transistor and the second transistor to a power line.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
title | Memory cell array |
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