Photolithography mask synthesis for spacer patterning
Photolithography mask synthesis is disclosed for spacer patterning masks. In one example, backbone features are extracted from a target layout of a mask design. A connectivity graph is generated based on the target layout in which lines of the backbone features are represented as nodes on the connec...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | BAIDYA BIKRAM SINGH VIVEK K DANDEKAR OMKAR S |
| description | Photolithography mask synthesis is disclosed for spacer patterning masks. In one example, backbone features are extracted from a target layout of a mask design. A connectivity graph is generated based on the target layout in which lines of the backbone features are represented as nodes on the connectivity graph. The nodes are connected based on spacer patterning process limitations and the connections are assigned to sets. A backbone mask layout is then generated based on one of the sets of nodes. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9268893B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9268893B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9268893B23</originalsourceid><addsrcrecordid>eNrjZDANyMgvyc_JLMnITy9KLMioVMhNLM5WKK7MK8lILc4sVkjLL1IoLkhMTi1SKEgsKUktysvMS-dhYE1LzClO5YXS3AwKbq4hzh66qQX58alg5XmpJfGhwZZGZhYWlsZORsZEKAEAf9st9A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Photolithography mask synthesis for spacer patterning</title><source>esp@cenet</source><creator>BAIDYA BIKRAM ; SINGH VIVEK K ; DANDEKAR OMKAR S</creator><creatorcontrib>BAIDYA BIKRAM ; SINGH VIVEK K ; DANDEKAR OMKAR S</creatorcontrib><description>Photolithography mask synthesis is disclosed for spacer patterning masks. In one example, backbone features are extracted from a target layout of a mask design. A connectivity graph is generated based on the target layout in which lines of the backbone features are represented as nodes on the connectivity graph. The nodes are connected based on spacer patterning process limitations and the connections are assigned to sets. A backbone mask layout is then generated based on one of the sets of nodes.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CALCULATING ; CINEMATOGRAPHY ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160223&DB=EPODOC&CC=US&NR=9268893B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160223&DB=EPODOC&CC=US&NR=9268893B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BAIDYA BIKRAM</creatorcontrib><creatorcontrib>SINGH VIVEK K</creatorcontrib><creatorcontrib>DANDEKAR OMKAR S</creatorcontrib><title>Photolithography mask synthesis for spacer patterning</title><description>Photolithography mask synthesis is disclosed for spacer patterning masks. In one example, backbone features are extracted from a target layout of a mask design. A connectivity graph is generated based on the target layout in which lines of the backbone features are represented as nodes on the connectivity graph. The nodes are connected based on spacer patterning process limitations and the connections are assigned to sets. A backbone mask layout is then generated based on one of the sets of nodes.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CALCULATING</subject><subject>CINEMATOGRAPHY</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANyMgvyc_JLMnITy9KLMioVMhNLM5WKK7MK8lILc4sVkjLL1IoLkhMTi1SKEgsKUktysvMS-dhYE1LzClO5YXS3AwKbq4hzh66qQX58alg5XmpJfGhwZZGZhYWlsZORsZEKAEAf9st9A</recordid><startdate>20160223</startdate><enddate>20160223</enddate><creator>BAIDYA BIKRAM</creator><creator>SINGH VIVEK K</creator><creator>DANDEKAR OMKAR S</creator><scope>EVB</scope></search><sort><creationdate>20160223</creationdate><title>Photolithography mask synthesis for spacer patterning</title><author>BAIDYA BIKRAM ; SINGH VIVEK K ; DANDEKAR OMKAR S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9268893B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CALCULATING</topic><topic>CINEMATOGRAPHY</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>BAIDYA BIKRAM</creatorcontrib><creatorcontrib>SINGH VIVEK K</creatorcontrib><creatorcontrib>DANDEKAR OMKAR S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BAIDYA BIKRAM</au><au>SINGH VIVEK K</au><au>DANDEKAR OMKAR S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photolithography mask synthesis for spacer patterning</title><date>2016-02-23</date><risdate>2016</risdate><abstract>Photolithography mask synthesis is disclosed for spacer patterning masks. In one example, backbone features are extracted from a target layout of a mask design. A connectivity graph is generated based on the target layout in which lines of the backbone features are represented as nodes on the connectivity graph. The nodes are connected based on spacer patterning process limitations and the connections are assigned to sets. A backbone mask layout is then generated based on one of the sets of nodes.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US9268893B2 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Photolithography mask synthesis for spacer patterning |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T14%3A56%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BAIDYA%20BIKRAM&rft.date=2016-02-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9268893B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |