Phase-shift blankmask and method for fabricating the same
Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and du...
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| creator | NAM KEE-SOO CHOI MIN-KI KANG GEUNG-WON JANG JONG-WON KIM DONG-GEUN |
| description | Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof. Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability. Furthermore, degradation in the refractive index and degree of phase shift of the phase-shift layer, caused when the cleaning process is repeatedly performed may be prevented due to the uppermost phase-shift layer having the enhanced chemical resistance and durability. Accordingly, a phase-shift blankmask including a thin phase-shift layer can be provided. |
| format | Patent |
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Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability. Furthermore, degradation in the refractive index and degree of phase shift of the phase-shift layer, caused when the cleaning process is repeatedly performed may be prevented due to the uppermost phase-shift layer having the enhanced chemical resistance and durability. Accordingly, a phase-shift blankmask including a thin phase-shift layer can be provided.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160209&DB=EPODOC&CC=US&NR=9256119B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160209&DB=EPODOC&CC=US&NR=9256119B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAM KEE-SOO</creatorcontrib><creatorcontrib>CHOI MIN-KI</creatorcontrib><creatorcontrib>KANG GEUNG-WON</creatorcontrib><creatorcontrib>JANG JONG-WON</creatorcontrib><creatorcontrib>KIM DONG-GEUN</creatorcontrib><title>Phase-shift blankmask and method for fabricating the same</title><description>Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof. Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability. Furthermore, degradation in the refractive index and degree of phase shift of the phase-shift layer, caused when the cleaning process is repeatedly performed may be prevented due to the uppermost phase-shift layer having the enhanced chemical resistance and durability. 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Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability. Furthermore, degradation in the refractive index and degree of phase shift of the phase-shift layer, caused when the cleaning process is repeatedly performed may be prevented due to the uppermost phase-shift layer having the enhanced chemical resistance and durability. Accordingly, a phase-shift blankmask including a thin phase-shift layer can be provided.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Phase-shift blankmask and method for fabricating the same |
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