Buried trench isolation in integrated circuits

Buried trench isolation in integrated circuits

A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: XUE LEI, SUGINO RINJI, CHAN SIMON, LU CHING-HUANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator XUE LEI
SUGINO RINJI
CHAN SIMON
LU CHING-HUANG
description A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9252026B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9252026B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9252026B23</originalsourceid><addsrcrecordid>eNrjZNBzKi3KTE1RKClKzUvOUMgszs9JLMnMz1PIBKGS1PSixBKgdHJmUXJpZkkxDwNrWmJOcSovlOZmUHBzDXH20E0tyI9PLS5ITE7NSy2JDw22NDI1MjAyczIyJkIJAMS6KpA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Buried trench isolation in integrated circuits</title><source>esp@cenet</source><creator>XUE LEI ; SUGINO RINJI ; CHAN SIMON ; LU CHING-HUANG</creator><creatorcontrib>XUE LEI ; SUGINO RINJI ; CHAN SIMON ; LU CHING-HUANG</creatorcontrib><description>A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160202&amp;DB=EPODOC&amp;CC=US&amp;NR=9252026B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160202&amp;DB=EPODOC&amp;CC=US&amp;NR=9252026B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XUE LEI</creatorcontrib><creatorcontrib>SUGINO RINJI</creatorcontrib><creatorcontrib>CHAN SIMON</creatorcontrib><creatorcontrib>LU CHING-HUANG</creatorcontrib><title>Buried trench isolation in integrated circuits</title><description>A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBzKi3KTE1RKClKzUvOUMgszs9JLMnMz1PIBKGS1PSixBKgdHJmUXJpZkkxDwNrWmJOcSovlOZmUHBzDXH20E0tyI9PLS5ITE7NSy2JDw22NDI1MjAyczIyJkIJAMS6KpA</recordid><startdate>20160202</startdate><enddate>20160202</enddate><creator>XUE LEI</creator><creator>SUGINO RINJI</creator><creator>CHAN SIMON</creator><creator>LU CHING-HUANG</creator><scope>EVB</scope></search><sort><creationdate>20160202</creationdate><title>Buried trench isolation in integrated circuits</title><author>XUE LEI ; SUGINO RINJI ; CHAN SIMON ; LU CHING-HUANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9252026B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>XUE LEI</creatorcontrib><creatorcontrib>SUGINO RINJI</creatorcontrib><creatorcontrib>CHAN SIMON</creatorcontrib><creatorcontrib>LU CHING-HUANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XUE LEI</au><au>SUGINO RINJI</au><au>CHAN SIMON</au><au>LU CHING-HUANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Buried trench isolation in integrated circuits</title><date>2016-02-02</date><risdate>2016</risdate><abstract>A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9252026B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Buried trench isolation in integrated circuits
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T08%3A38%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=XUE%20LEI&rft.date=2016-02-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9252026B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true