Method of forming a high electron mobility transistor

A method of forming a high electron mobility transistor may include: forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; fo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU POUN, CHIANG CHEN-HAO, YU CHUNG-YI, CHEN CHI-MING, CHIU HANIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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