Method of forming a high electron mobility transistor

Method of forming a high electron mobility transistor

A method of forming a high electron mobility transistor may include: forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; fo...

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Hauptverfasser: LIU POUN, CHIANG CHEN-HAO, YU CHUNG-YI, CHEN CHI-MING, CHIU HANIN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LIU POUN
CHIANG CHEN-HAO
YU CHUNG-YI
CHEN CHI-MING
CHIU HANIN
description A method of forming a high electron mobility transistor may include: forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; forming an n-type doped region in the second III-V compound layer, the n-type doped region overlying the p-type doped region; forming a source feature over the second III-V compound layer, the source feature overlying the n-type doped region; and forming a gate electrode over the second III-V compound layer, the gate electrode disposed laterally adjacent to the source feature.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of forming a high electron mobility transistor
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