Mechanism for forming metal gate structure

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate. A source region and a drain region are formed in the semiconductor substrate, and metal silicide regions are formed in the source region and the drain region, respe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG CHIA-DER, WANG TIENUN, LO CHIA-PING, YANG FU-KAI, WANG MEI-YUN, HSU HUNGANG, LO YIUN, CHI GUOIANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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