Formation of a high aspect ratio contact hole

A small contact hole having a large aspect ratio is formed by employing a stop layer with a trench formed therein. A relatively large contact hole is formed above the trench, and the small contact hole is formed below the trench, using properties of the trench and the stop layer to limit the size of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YANG ZUSING, HSU FANG-HAO, LEE HONG-JI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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