Formation of a high aspect ratio contact hole

Formation of a high aspect ratio contact hole

A small contact hole having a large aspect ratio is formed by employing a stop layer with a trench formed therein. A relatively large contact hole is formed above the trench, and the small contact hole is formed below the trench, using properties of the trench and the stop layer to limit the size of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YANG ZUSING, HSU FANG-HAO, LEE HONG-JI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YANG ZUSING
HSU FANG-HAO
LEE HONG-JI
description A small contact hole having a large aspect ratio is formed by employing a stop layer with a trench formed therein. A relatively large contact hole is formed above the trench, and the small contact hole is formed below the trench, using properties of the trench and the stop layer to limit the size of the small contact hole.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9224803B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9224803B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9224803B23</originalsourceid><addsrcrecordid>eNrjZNB1yy_KTSzJzM9TyE9TSFTIyEzPUEgsLkhNLlEoAokrJOfnlSQCeRn5Oak8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSQ-NNjSyMjEwsDYyciYCCUARN4pdg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Formation of a high aspect ratio contact hole</title><source>esp@cenet</source><creator>YANG ZUSING ; HSU FANG-HAO ; LEE HONG-JI</creator><creatorcontrib>YANG ZUSING ; HSU FANG-HAO ; LEE HONG-JI</creatorcontrib><description>A small contact hole having a large aspect ratio is formed by employing a stop layer with a trench formed therein. A relatively large contact hole is formed above the trench, and the small contact hole is formed below the trench, using properties of the trench and the stop layer to limit the size of the small contact hole.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151229&amp;DB=EPODOC&amp;CC=US&amp;NR=9224803B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151229&amp;DB=EPODOC&amp;CC=US&amp;NR=9224803B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YANG ZUSING</creatorcontrib><creatorcontrib>HSU FANG-HAO</creatorcontrib><creatorcontrib>LEE HONG-JI</creatorcontrib><title>Formation of a high aspect ratio contact hole</title><description>A small contact hole having a large aspect ratio is formed by employing a stop layer with a trench formed therein. A relatively large contact hole is formed above the trench, and the small contact hole is formed below the trench, using properties of the trench and the stop layer to limit the size of the small contact hole.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB1yy_KTSzJzM9TyE9TSFTIyEzPUEgsLkhNLlEoAokrJOfnlSQCeRn5Oak8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSQ-NNjSyMjEwsDYyciYCCUARN4pdg</recordid><startdate>20151229</startdate><enddate>20151229</enddate><creator>YANG ZUSING</creator><creator>HSU FANG-HAO</creator><creator>LEE HONG-JI</creator><scope>EVB</scope></search><sort><creationdate>20151229</creationdate><title>Formation of a high aspect ratio contact hole</title><author>YANG ZUSING ; HSU FANG-HAO ; LEE HONG-JI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9224803B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YANG ZUSING</creatorcontrib><creatorcontrib>HSU FANG-HAO</creatorcontrib><creatorcontrib>LEE HONG-JI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YANG ZUSING</au><au>HSU FANG-HAO</au><au>LEE HONG-JI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Formation of a high aspect ratio contact hole</title><date>2015-12-29</date><risdate>2015</risdate><abstract>A small contact hole having a large aspect ratio is formed by employing a stop layer with a trench formed therein. A relatively large contact hole is formed above the trench, and the small contact hole is formed below the trench, using properties of the trench and the stop layer to limit the size of the small contact hole.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9224803B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Formation of a high aspect ratio contact hole
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T20%3A52%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YANG%20ZUSING&rft.date=2015-12-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9224803B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true