Complementary metal-oxide-semiconductor (CMOS) image sensor including a junction field effect transistor

An image sensor includes a sensing node to sense photo charges output from a photodiode. The sensing node includes a first dopant region of a first conductivity type and a second dopant region of a second conductivity type. The second dopant region surrounds the first dopant region. A third dopant r...

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1. Verfasser:	GOTO HIROSIGE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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