Methods of forming a replacement gate structure having a gate electrode comprised of a deposited intermetallic compound material

Disclosed herein are various methods of forming a replacement gate structure with a gate electrode comprised of a deposited intermetallic compound material. In one example, the method includes removing at least a sacrificial gate electrode structure to define a gate cavity, forming a gate insulation...

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Hauptverfasser:	RAYMOND MARK V, CHOI KISIK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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