Photodetecting device having semiconductor regions separated by a potential barrier
Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semicondu...
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| creator | GIDON PIERRE MOUSSY NORBERT |
| description | Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer. |
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a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151201&DB=EPODOC&CC=US&NR=9202840B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151201&DB=EPODOC&CC=US&NR=9202840B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GIDON PIERRE</creatorcontrib><creatorcontrib>MOUSSY NORBERT</creatorcontrib><title>Photodetecting device having semiconductor regions separated by a potential barrier</title><description>Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNisEKwjAQBXPxIOo_7A8IJXrQq0XxKFTPZZs820DNhmQt-Pcq-AGehhlmbprLICoeCqch9uQxBQcaePpawSM4if7pVDJl9EFi-dTEmRWeuhcxJVFEDTxSxzkH5KWZ3XksWP24MHQ6XuvzGklalMQOEdremr2t7G5bHezmj-UNWZI47g</recordid><startdate>20151201</startdate><enddate>20151201</enddate><creator>GIDON PIERRE</creator><creator>MOUSSY NORBERT</creator><scope>EVB</scope></search><sort><creationdate>20151201</creationdate><title>Photodetecting device having semiconductor regions separated by a potential barrier</title><author>GIDON PIERRE ; MOUSSY NORBERT</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9202840B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GIDON PIERRE</creatorcontrib><creatorcontrib>MOUSSY NORBERT</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GIDON PIERRE</au><au>MOUSSY NORBERT</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photodetecting device having semiconductor regions separated by a potential barrier</title><date>2015-12-01</date><risdate>2015</risdate><abstract>Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Photodetecting device having semiconductor regions separated by a potential barrier |
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