Method for defining a separating structure within a semiconductor device

A method includes depositing a material layer over a semiconductor substrate and using a first mask in a first exposure/patterning process to pattern the material layer thereby forming a plurality of first and second features. The first features include patterns for the semiconductor device and the...

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Bibliographische Detailangaben
1. Verfasser: HAFFNER HENNING
Format: Patent
Sprache:eng
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