Evaluating semiconductor wafers for pitch walking and/or epitaxial merge

Evaluating a semiconductor wafer may include recording a first intensity of a reflection of an X-ray beam onto a test area on a substrate of the semiconductor wafer at a detector as the X-ray beam is projected substantially perpendicular to a length of expected, periodic structures in the test area...

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Bibliographische Detailangaben
Hauptverfasser: KOHLI KRITESHWAR K, PINTO TERESA L, MADAN ANITA, LINDO PATRICK E
Format: Patent
Sprache:eng
Schlagworte:
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