Resistive memory and fabricating method thereof

A resistive memory and a fabricating method thereof are provided. The resistive memory includes first and second electrodes, a variable resistance material layer, a first dielectric layer, and a second dielectric layer. The first electrode includes a first portion and a second portion. The second el...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE MING-HSIU, CHIEN WEIIH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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