Methods of managing metal density in dicing channel and related integrated circuit structures

Various embodiments include managing metal densities in kerf sections of an integrated circuit (IC) wafer. In some embodiments, a method includes: forming an integrated circuit (IC) wafer including a wafer kerf region, the wafer kerf region having a metal density of less than approximately 0.5 perce...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GRAF RICHARD S, MILO GARY L, COONEY, III EDWARD C, GAMBINO JEFFREY P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!