Method for processing at least one crystalline silicon-wafer with a thermal budget or a solar-cell wafer with a thermal budget by a laser beam

In different embodiments, a method is provided for processing at least one crystalline Silicon-wafer or a Solar-cell wafer. The method may include: a movement of the wafer with respect to a laser producing a laser beam; and therefore the formation of a laser channel in the wafer by means of a laser...

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Bibliographische Detailangaben
Hauptverfasser:	KOENIG JOACHIM, RICHTER MATTHIAS, KUTZER MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	In different embodiments, a method is provided for processing at least one crystalline Silicon-wafer or a Solar-cell wafer. The method may include: a movement of the wafer with respect to a laser producing a laser beam; and therefore the formation of a laser channel in the wafer by means of a laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel.