Method for manufacturing thin-film transistor and thin-film transistor manufactured with same
The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a...
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creator | HSIAO HSIANGCHIH CHENG YANGLING |
description | The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor. |
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The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151027&DB=EPODOC&CC=US&NR=9171939B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151027&DB=EPODOC&CC=US&NR=9171939B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HSIAO HSIANGCHIH</creatorcontrib><creatorcontrib>CHENG YANGLING</creatorcontrib><title>Method for manufacturing thin-film transistor and thin-film transistor manufactured with same</title><description>The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIj1TS3JyE9RSMsvUshNzCtNS0wuKS3KzEtXKMnIzNNNy8zJVSgpSswrziwuASpJzEvBLoHQm5qiUJ5ZkqFQnJibysPAmpaYU5zKC6W5GRTcXEOcPXRTC_LjU4sLEpNT81JL4kODLQ3NDS2NLZ2MjIlQAgDqTDzW</recordid><startdate>20151027</startdate><enddate>20151027</enddate><creator>HSIAO HSIANGCHIH</creator><creator>CHENG YANGLING</creator><scope>EVB</scope></search><sort><creationdate>20151027</creationdate><title>Method for manufacturing thin-film transistor and thin-film transistor manufactured with same</title><author>HSIAO HSIANGCHIH ; CHENG YANGLING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9171939B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HSIAO HSIANGCHIH</creatorcontrib><creatorcontrib>CHENG YANGLING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HSIAO HSIANGCHIH</au><au>CHENG YANGLING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for manufacturing thin-film transistor and thin-film transistor manufactured with same</title><date>2015-10-27</date><risdate>2015</risdate><abstract>The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method for manufacturing thin-film transistor and thin-film transistor manufactured with same |
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