Plasma processing apparatus and plasma processing method
Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to receive a substrate thereon, a gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to p...
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| creator | WAMURA YU SHIMIZU AKIRA |
| description | Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to receive a substrate thereon, a gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed. |
| format | Patent |
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The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151020&DB=EPODOC&CC=US&NR=9165780B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151020&DB=EPODOC&CC=US&NR=9165780B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WAMURA YU</creatorcontrib><creatorcontrib>SHIMIZU AKIRA</creatorcontrib><title>Plasma processing apparatus and plasma processing method</title><description>Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to receive a substrate thereon, a gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Plasma processing apparatus and plasma processing method |
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