Stress migration mitigation utilizing induced stress effects in metal trace of integrated circuit device

An integrated circuit (IC) device includes a plurality of metal layers having metal traces, and a plurality of vias interconnecting the metal traces. The presence of vacancies within the metal layers may disrupt the functionality of the IC device if the vacancies migrate to the vias interconnecting...

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Bibliographische Detailangaben

Hauptverfasser:	SHROFF MEHUL D, REBER DOUGLAS M, TRAVIS EDWARD O
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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