Stacked type power device module
The disclosure relates to a stacked type power device module. May use the vertical conductive layer for coupling the stacked devices, the electrical transmission path may be shortened. Hence, current crowding or contact damages by employing the conductive vias or wire bonding may be alleviated.
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | CHANG TAOIH HUNG YIN-PO |
description | The disclosure relates to a stacked type power device module. May use the vertical conductive layer for coupling the stacked devices, the electrical transmission path may be shortened. Hence, current crowding or contact damages by employing the conductive vias or wire bonding may be alleviated. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9142473B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9142473B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9142473B23</originalsourceid><addsrcrecordid>eNrjZFAILklMzk5NUSipLEhVKMgvTy1SSEkty0xOVcjNTynNSeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZaGJkYm5sZORsZEKAEACbMk-Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Stacked type power device module</title><source>esp@cenet</source><creator>CHANG TAOIH ; HUNG YIN-PO</creator><creatorcontrib>CHANG TAOIH ; HUNG YIN-PO</creatorcontrib><description>The disclosure relates to a stacked type power device module. May use the vertical conductive layer for coupling the stacked devices, the electrical transmission path may be shortened. Hence, current crowding or contact damages by employing the conductive vias or wire bonding may be alleviated.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150922&DB=EPODOC&CC=US&NR=9142473B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150922&DB=EPODOC&CC=US&NR=9142473B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHANG TAOIH</creatorcontrib><creatorcontrib>HUNG YIN-PO</creatorcontrib><title>Stacked type power device module</title><description>The disclosure relates to a stacked type power device module. May use the vertical conductive layer for coupling the stacked devices, the electrical transmission path may be shortened. Hence, current crowding or contact damages by employing the conductive vias or wire bonding may be alleviated.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAILklMzk5NUSipLEhVKMgvTy1SSEkty0xOVcjNTynNSeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZaGJkYm5sZORsZEKAEACbMk-Q</recordid><startdate>20150922</startdate><enddate>20150922</enddate><creator>CHANG TAOIH</creator><creator>HUNG YIN-PO</creator><scope>EVB</scope></search><sort><creationdate>20150922</creationdate><title>Stacked type power device module</title><author>CHANG TAOIH ; HUNG YIN-PO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9142473B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHANG TAOIH</creatorcontrib><creatorcontrib>HUNG YIN-PO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHANG TAOIH</au><au>HUNG YIN-PO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Stacked type power device module</title><date>2015-09-22</date><risdate>2015</risdate><abstract>The disclosure relates to a stacked type power device module. May use the vertical conductive layer for coupling the stacked devices, the electrical transmission path may be shortened. Hence, current crowding or contact damages by employing the conductive vias or wire bonding may be alleviated.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US9142473B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Stacked type power device module |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T10%3A35%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHANG%20TAOIH&rft.date=2015-09-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9142473B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |