Thin film transistor including semiconductor oxide layer having reduced resistance regions

Thin film transistor including semiconductor oxide layer having reduced resistance regions

A semiconductor device (ST) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source ele...

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1. Verfasser: KATOH SUMIO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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creator KATOH SUMIO
description A semiconductor device (ST) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source electrode (15bs) and the drain electrode (15bd) is arranged so as not to overlap with the gate electrode (12b) as viewed in the plane. A region adjacent to the gate electrode (12b) and the source electrode (15bs) and a region adjacent to the gate electrode (12b) and the drain electrode (15bd) are, in a region where the source electrode (15bs) and the drain electrode (15bd) does not overlap with the gate electrode (12b), processed such that resistance in a region of the oxide semiconductor film (14b) including a surface thereof is reduced.
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The source electrode (15bs) and the drain electrode (15bd) is arranged so as not to overlap with the gate electrode (12b) as viewed in the plane. A region adjacent to the gate electrode (12b) and the source electrode (15bs) and a region adjacent to the gate electrode (12b) and the drain electrode (15bd) are, in a region where the source electrode (15bs) and the drain electrode (15bd) does not overlap with the gate electrode (12b), processed such that resistance in a region of the oxide semiconductor film (14b) including a surface thereof is reduced.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150901&amp;DB=EPODOC&amp;CC=US&amp;NR=9123820B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150901&amp;DB=EPODOC&amp;CC=US&amp;NR=9123820B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KATOH SUMIO</creatorcontrib><title>Thin film transistor including semiconductor oxide layer having reduced resistance regions</title><description>A semiconductor device (ST) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). 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subjects BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
title Thin film transistor including semiconductor oxide layer having reduced resistance regions
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