Connecting through vias to devices

Methods and devices for connecting a through via and a terminal of a transistor formed of a strained silicon material are provided. The terminal, which can be a source or a drain of a NMOS or a PMOS transistor, is formed within a substrate. A first contact within a first inter-layer dielectric (ILD)...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JAN SEN-BOR, CHEN MING-FA, WANG YU-YOUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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