Methods of in-situ measurements of wafer bow

Various embodiments describe a method of quantifying bow in a wafer. In one embodiment, the method includes measuring a first plurality of distances from a first sensor to a first surface of the wafer to calculate the bow in the wafer. The first sensor is positioned outside of a set of process modul...

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creator BAILEY, III ANDREW D
description Various embodiments describe a method of quantifying bow in a wafer. In one embodiment, the method includes measuring a first plurality of distances from a first sensor to a first surface of the wafer to calculate the bow in the wafer. The first sensor is positioned outside of a set of process modules of the plasma processing system. A determination is made whether the calculated bow of the wafer is within a pre-determined range. If the calculated bow of the wafer is within the pre-determined range, the wafer is moved into a process module of the set of process modules for processing and a recipe for processing the wafer is adjusted based on the calculated bow of the wafer. If the calculated bow of the wafer is outside the pre-determined range, the wafer is removed from the plasma processing system. Other methods are described as well.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title Methods of in-situ measurements of wafer bow
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