Methods of forming a dielectric cap layer on a metal gate structure

Disclosed herein are various methods of forming isolation structures on FinFETs and other semiconductor devices, and the resulting devices that have such isolation structures. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the...

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Bibliographische Detailangaben

Hauptverfasser:	CHO JIN, IACOPONI JOHN, CAI XIUYU, XIE RUILONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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