Magnetron sputtering apparatus and method of manufacturing semiconductor device
A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron abo...
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| creator | IYANAGI KATSUMI MATSUNAKA SHIGEKI |
| description | A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other. |
| format | Patent |
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The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.</description><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150811&DB=EPODOC&CC=US&NR=9103025B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150811&DB=EPODOC&CC=US&NR=9103025B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IYANAGI KATSUMI</creatorcontrib><creatorcontrib>MATSUNAKA SHIGEKI</creatorcontrib><title>Magnetron sputtering apparatus and method of manufacturing semiconductor device</title><description>A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzbEKwjAQgOEsDqK-w72AUFscXBVLF3FQ53IklzZg7kJy8fkV8QGc_uWDf2muF5yYNAtDSVWVcuAJMCXMqLUAsoNIOosD8RCRq0er9asKxWCFXbUqGRy9gqW1WXh8Ftr8ujLQn--nYUtJRioJLX124-N22DVd0-6PbfcHeQNzxTet</recordid><startdate>20150811</startdate><enddate>20150811</enddate><creator>IYANAGI KATSUMI</creator><creator>MATSUNAKA SHIGEKI</creator><scope>EVB</scope></search><sort><creationdate>20150811</creationdate><title>Magnetron sputtering apparatus and method of manufacturing semiconductor device</title><author>IYANAGI KATSUMI ; MATSUNAKA SHIGEKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9103025B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>IYANAGI KATSUMI</creatorcontrib><creatorcontrib>MATSUNAKA SHIGEKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IYANAGI KATSUMI</au><au>MATSUNAKA SHIGEKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetron sputtering apparatus and method of manufacturing semiconductor device</title><date>2015-08-11</date><risdate>2015</risdate><abstract>A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Magnetron sputtering apparatus and method of manufacturing semiconductor device |
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