Nano-structure semiconductor light emitting device

Nano-structure semiconductor light emitting device

A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer....

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Hauptverfasser: SEO YEON WOO, CHOI YOUNG JIN, HEO JAE HYEOK, CHUN DAE MYUNG, KIM JUNG-SUB, SANNIKOV DENIS, SEONG HAN KYU
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SEO YEON WOO
CHOI YOUNG JIN
HEO JAE HYEOK
CHUN DAE MYUNG
KIM JUNG-SUB
SANNIKOV DENIS
SEONG HAN KYU
description A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Nano-structure semiconductor light emitting device
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