Method of manufacturing semiconductor device

A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the...

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Hauptverfasser:	KIM JI HWANG, CHOI KWANGUL, MIN TAE HONG, YOUN SUNPIL, KIM SANGWON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	KIM JI HWANG CHOI KWANGUL MIN TAE HONG YOUN SUNPIL KIM SANGWON
description	A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Method of manufacturing semiconductor device
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