Peeling apparatus and manufacturing apparatus of semiconductor device
To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap betw...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | TANI ATSUHIRO HASHIMOTO KENICHI HOSAKA YASUHARU MONMA YOHEI HIROSUE MISAKO EGUCHI SHINGO |
description | To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9087931B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9087931B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9087931B23</originalsourceid><addsrcrecordid>eNrjZHANSE3NycxLV0gsKEgsSiwpLVZIzEtRyE3MK01LTC4pLUKVy09TKE7NzUzOz0spTS7JL1JISS3LTE7lYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocGWBhbmlsaGTkbGRCgBAOR8M7k</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Peeling apparatus and manufacturing apparatus of semiconductor device</title><source>esp@cenet</source><creator>TANI ATSUHIRO ; HASHIMOTO KENICHI ; HOSAKA YASUHARU ; MONMA YOHEI ; HIROSUE MISAKO ; EGUCHI SHINGO</creator><creatorcontrib>TANI ATSUHIRO ; HASHIMOTO KENICHI ; HOSAKA YASUHARU ; MONMA YOHEI ; HIROSUE MISAKO ; EGUCHI SHINGO</creatorcontrib><description>To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150721&DB=EPODOC&CC=US&NR=9087931B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150721&DB=EPODOC&CC=US&NR=9087931B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANI ATSUHIRO</creatorcontrib><creatorcontrib>HASHIMOTO KENICHI</creatorcontrib><creatorcontrib>HOSAKA YASUHARU</creatorcontrib><creatorcontrib>MONMA YOHEI</creatorcontrib><creatorcontrib>HIROSUE MISAKO</creatorcontrib><creatorcontrib>EGUCHI SHINGO</creatorcontrib><title>Peeling apparatus and manufacturing apparatus of semiconductor device</title><description>To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANSE3NycxLV0gsKEgsSiwpLVZIzEtRyE3MK01LTC4pLUKVy09TKE7NzUzOz0spTS7JL1JISS3LTE7lYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocGWBhbmlsaGTkbGRCgBAOR8M7k</recordid><startdate>20150721</startdate><enddate>20150721</enddate><creator>TANI ATSUHIRO</creator><creator>HASHIMOTO KENICHI</creator><creator>HOSAKA YASUHARU</creator><creator>MONMA YOHEI</creator><creator>HIROSUE MISAKO</creator><creator>EGUCHI SHINGO</creator><scope>EVB</scope></search><sort><creationdate>20150721</creationdate><title>Peeling apparatus and manufacturing apparatus of semiconductor device</title><author>TANI ATSUHIRO ; HASHIMOTO KENICHI ; HOSAKA YASUHARU ; MONMA YOHEI ; HIROSUE MISAKO ; EGUCHI SHINGO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9087931B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TANI ATSUHIRO</creatorcontrib><creatorcontrib>HASHIMOTO KENICHI</creatorcontrib><creatorcontrib>HOSAKA YASUHARU</creatorcontrib><creatorcontrib>MONMA YOHEI</creatorcontrib><creatorcontrib>HIROSUE MISAKO</creatorcontrib><creatorcontrib>EGUCHI SHINGO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANI ATSUHIRO</au><au>HASHIMOTO KENICHI</au><au>HOSAKA YASUHARU</au><au>MONMA YOHEI</au><au>HIROSUE MISAKO</au><au>EGUCHI SHINGO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Peeling apparatus and manufacturing apparatus of semiconductor device</title><date>2015-07-21</date><risdate>2015</risdate><abstract>To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US9087931B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Peeling apparatus and manufacturing apparatus of semiconductor device |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T02%3A43%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TANI%20ATSUHIRO&rft.date=2015-07-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9087931B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |