(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers

A method of fabricating a heterostructure device, including (a) obtaining a first layer or substrate; (b) growing a second layer on the first layer or substrate; and (c) forming the second layer that is at least partially relaxed wherein (1) the first layer and the second layer have the same lattice...

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Bibliographische Detailangaben

Hauptverfasser:	NEUFELD CARL J, KELLER STACIA, DENBAARS STEVEN P, MISHRA UMESH K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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